teledyne microwave solutions ? 650-691-9800 ? fax: 650-962-06845 specifications subject to change without notice. pha-0135b typical biasing configuration note: 1. permanent damage may occur if any of these limits are exceeded. technical data pha-0135b suggested maximum ratings parameter suggested maximum [1] device current 40 ma rf input power +13 dbm junction temperature +200 c storage temperature -65 to +150 c cascadable silicon bipolar mmic amplifier pha-0135b description the pha-0135b is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a microstrip package. this product is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. 35 micro-x package dimensions 0.02 notes: (unless otherwise specified) 1. dimensions are in inches 2. tolerances: x.xxx = 0.005 0.006 0.002 0.100 0.495 0.030 gnd rf in rf out gnd ou in c block c block 2 3 1 4 v d = 5 v cc > 7 v r bias rfc .083 dia. tms is not the original device manufacturer. tms procures commercial off the shelf product and upscreens per the following process flow. for custom screening requirements, quality conformance inspection, or additional electrical selection, please contact t ms .
teledyne microwave solutions ? 650-691-9800 ? fax: 650-962-06845 specifications subject to change without notice. pha-0135b electrical specifications [[ 1 ]] +25 c symbol parameters and test conditions units min max g p power gain ( ? s 21 ? 2 ) f =0.1 ghz db 18.0 20.0 d gp gain flatness f= 0.1 ghz-0.6 ghz db 1.0 v d device voltage @ 17 ma v 4.5 5.5 note: 1. the recommended operating current range for this device is 13 to 25 ma. t 0 6 upscreen table 2a 100% screening screening test/operation mil-std-883 method conditions stabilization bake 1008 condition c, ta = +150 c t= 24 hrs. temperature cycling 1010 condition c, -65 to +150c, 10 cycles minimum constant acceleration 2001 condition e, 30,000 g, y1 axis only pre burn-in electrical test (optional) +25c; g p, d gp and vd burn-in 1015 condition b, t= 160 hrs., ta = +125c final electrical test ----- +25c; g p, d gp and vd percent defective allowable (pda) 5% max.; applies to 25c final electrical test hermeticity fine leak gross leak 1014 1014 condition a condition c external visual 2009 shipment packaging 10 units per strip marking: manufacturers marking (if applicable) will remain on devices. tms individual packaging will be labeled withtms part number and manufacturer date code. tms shipment date code will appear on outer label and c of c. certificate of conformance (c of c) will be sent with each shipment. this document provides objective evidence of tms testing and documents traceability to manufacturers wafer/lot identification.
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